IGBT, FGA60N65SMD, N-Canal, 120 A, 650 V, TO-3PN, 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
120 A
Tensión Máxima Colector-Emisor
650 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
600000 mW
Tipo de Encapsulado
TO-3PN
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
15.8 x 5 x 20.1mm
Mínima Temperatura de Funcionamiento
-55 °C
Temperatura de Funcionamiento Máxima
+175 °C
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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$ 7.743
Each (Sin IVA)
$ 9.214
Each (IVA Incluido)
1
$ 7.743
Each (Sin IVA)
$ 9.214
Each (IVA Incluido)
1
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA |
|---|---|
| 1 - 9 | $ 7.743 |
| 10 - 99 | $ 6.136 |
| 100 - 249 | $ 5.391 |
| 250 - 499 | $ 5.274 |
| 500+ | $ 4.690 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
120 A
Tensión Máxima Colector-Emisor
650 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
600000 mW
Tipo de Encapsulado
TO-3PN
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
15.8 x 5 x 20.1mm
Mínima Temperatura de Funcionamiento
-55 °C
Temperatura de Funcionamiento Máxima
+175 °C
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products