Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
60 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-247
Tipo de Montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
15.75 x 5.15 x 20.15mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura Máxima de Funcionamiento
+150 ºC
Datos del producto
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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$ 5.873
Each (Sin IVA)
$ 6.989
Each (IVA Inc.)
Estándar
1
$ 5.873
Each (Sin IVA)
$ 6.989
Each (IVA Inc.)
Estándar
1
Comprar en grandes cantidades
Cantidad | Precio Unitario sin IVA |
---|---|
1 - 9 | $ 5.873 |
10 - 99 | $ 4.982 |
100 - 499 | $ 4.003 |
500 - 999 | $ 3.536 |
1000+ | $ 2.995 |
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
60 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-247
Tipo de Montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
15.75 x 5.15 x 20.15mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura Máxima de Funcionamiento
+150 ºC
Datos del producto
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.