Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
50 A
Tensión Máxima Colector-Emisor
1200 V
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Conteo de Pines
3
Transistor Configuration
Single
Temperatura Mínima de Operación
-55 °C
Máxima Temperatura de Funcionamiento
+150 ºC
Datos del producto
Discretos IGBT, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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$ 13.354
Each (Sin IVA)
$ 15.891
Each (IVA Incluido)
1
$ 13.354
Each (Sin IVA)
$ 15.891
Each (IVA Incluido)
1
Comprar en grandes cantidades
Cantidad | Precio Unitario sin IVA |
---|---|
1 - 9 | $ 13.354 |
10+ | $ 11.630 |
Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
50 A
Tensión Máxima Colector-Emisor
1200 V
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Conteo de Pines
3
Transistor Configuration
Single
Temperatura Mínima de Operación
-55 °C
Máxima Temperatura de Funcionamiento
+150 ºC
Datos del producto
Discretos IGBT, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.