Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
20 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-220
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
10.4 x 4.6 x 9.15mm
Temperatura máxima de funcionamiento
+150 ºC
Temperatura de Funcionamiento Mínima
-55 °C
Datos del producto
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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$ 1.946
Each (In a Pack of 5) (Sin IVA)
$ 2.315,74
Each (In a Pack of 5) (IVA Incluido)
5
$ 1.946
Each (In a Pack of 5) (Sin IVA)
$ 2.315,74
Each (In a Pack of 5) (IVA Incluido)
5
Comprar en grandes cantidades
Cantidad | Precio Unitario sin IVA | Por Pack |
---|---|---|
5 - 20 | $ 1.946 | $ 9.730 |
25 - 45 | $ 1.850 | $ 9.250 |
50 - 120 | $ 1.663 | $ 8.315 |
125 - 245 | $ 1.496 | $ 7.480 |
250+ | $ 1.423 | $ 7.115 |
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
20 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-220
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
10.4 x 4.6 x 9.15mm
Temperatura máxima de funcionamiento
+150 ºC
Temperatura de Funcionamiento Mínima
-55 °C
Datos del producto
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.