IGBT, STGD5H60DF, N-Canal, 10 A, 600 V, DPAK (TO-252), 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
10 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
83000 mW
Tipo de Encapsulado
DPAK (TO-252)
Tipo de montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
6.6 x 6.2 x 2.4mm
Temperatura de Funcionamiento Mínima
-55 °C
Capacitancia de puerta
855pF
Temperatura máxima de funcionamiento
+175 °C
Energía nominal
221mJ
País de Origen
China
Datos del producto
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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$ 1.182
Each (In a Pack of 10) (Sin IVA)
$ 1.406,58
Each (In a Pack of 10) (IVA Incluido)
10
$ 1.182
Each (In a Pack of 10) (Sin IVA)
$ 1.406,58
Each (In a Pack of 10) (IVA Incluido)
10
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Por Pack |
|---|---|---|
| 10 - 40 | $ 1.182 | $ 11.820 |
| 50 - 90 | $ 1.122 | $ 11.220 |
| 100 - 240 | $ 1.010 | $ 10.100 |
| 250 - 490 | $ 910 | $ 9.100 |
| 500+ | $ 865 | $ 8.650 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
10 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
83000 mW
Tipo de Encapsulado
DPAK (TO-252)
Tipo de montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
6.6 x 6.2 x 2.4mm
Temperatura de Funcionamiento Mínima
-55 °C
Capacitancia de puerta
855pF
Temperatura máxima de funcionamiento
+175 °C
Energía nominal
221mJ
País de Origen
China
Datos del producto
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products