IGBT, STGD18N40LZT4, N-Canal, 30 A, 420 V, DPAK (TO-252), 3-Pines, 1MHZ Simple
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
30 A
Tensión Máxima Colector-Emisor
420 V
Tensión Máxima Puerta-Emisor
16V
Disipación de Potencia Máxima
125000 mW
Tipo de Encapsulado
DPAK (TO-252)
Tipo de montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Transistor Configuration
Single
Dimensiones del Cuerpo
6.6 x 6.2 x 2.4mm
Máxima Temperatura de Funcionamiento
+175 °C
Temperatura Mínima de Operación
-55 °C
Datos del producto
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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$ 2.606
Each (Supplied as a Tape) (Sin IVA)
$ 3.101,14
Each (Supplied as a Tape) (IVA Incluido)
5
$ 2.606
Each (Supplied as a Tape) (Sin IVA)
$ 3.101,14
Each (Supplied as a Tape) (IVA Incluido)
5
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Por Cinta |
|---|---|---|
| 5 - 20 | $ 2.606 | $ 13.030 |
| 25 - 45 | $ 2.475 | $ 12.375 |
| 50 - 120 | $ 2.229 | $ 11.145 |
| 125 - 245 | $ 2.004 | $ 10.020 |
| 250+ | $ 1.905 | $ 9.525 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
30 A
Tensión Máxima Colector-Emisor
420 V
Tensión Máxima Puerta-Emisor
16V
Disipación de Potencia Máxima
125000 mW
Tipo de Encapsulado
DPAK (TO-252)
Tipo de montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Transistor Configuration
Single
Dimensiones del Cuerpo
6.6 x 6.2 x 2.4mm
Máxima Temperatura de Funcionamiento
+175 °C
Temperatura Mínima de Operación
-55 °C
Datos del producto
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products