Transistor Darlington, ST901T, NPN 4 A, 350 V, HFE:500, TO-220, 3 pines Simple
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsTipo de Transistor
NPN
Corriente Máxima Continua del Colector
4 A
Tensión Máxima Colector-Emisor
350 V
Tensión Máxima Emisor-Base
5 V
Tipo de Encapsulado
TO-220
Tipo de montaje
Through Hole
Conteo de Pines
3
Transistor Configuration
Single
Número de Elementos por Chip
1
Ganancia Mínima de Corriente DC
500
Tensión de Saturación Máxima Base-Emisor
1.8 V
Maximum Collector Emitter Saturation Voltage
2 V
Corriente de Corte Máxima del Colector
500µA
Altura
6.2mm
Profundidad
2.4mm
Disipación de Potencia Máxima
100000 mW
Dimensiones
6.6 x 2.4 x 6.2mm
Longitud
6.6mm
Temperatura máxima de funcionamiento
+150 ºC
País de Origen
China
Datos del producto
Transistores Darlington NPN, ST Microelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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$ 1.676
Each (In a Tube of 50) (Sin IVA)
$ 1.994,44
Each (In a Tube of 50) (IVA Incluido)
50
$ 1.676
Each (In a Tube of 50) (Sin IVA)
$ 1.994,44
Each (In a Tube of 50) (IVA Incluido)
50
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Por Tubo |
|---|---|---|
| 50 - 50 | $ 1.676 | $ 83.800 |
| 100 - 200 | $ 1.248 | $ 62.400 |
| 250 - 450 | $ 1.237 | $ 61.850 |
| 500 - 950 | $ 1.059 | $ 52.950 |
| 1000+ | $ 859 | $ 42.950 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsTipo de Transistor
NPN
Corriente Máxima Continua del Colector
4 A
Tensión Máxima Colector-Emisor
350 V
Tensión Máxima Emisor-Base
5 V
Tipo de Encapsulado
TO-220
Tipo de montaje
Through Hole
Conteo de Pines
3
Transistor Configuration
Single
Número de Elementos por Chip
1
Ganancia Mínima de Corriente DC
500
Tensión de Saturación Máxima Base-Emisor
1.8 V
Maximum Collector Emitter Saturation Voltage
2 V
Corriente de Corte Máxima del Colector
500µA
Altura
6.2mm
Profundidad
2.4mm
Disipación de Potencia Máxima
100000 mW
Dimensiones
6.6 x 2.4 x 6.2mm
Longitud
6.6mm
Temperatura máxima de funcionamiento
+150 ºC
País de Origen
China
Datos del producto
Transistores Darlington NPN, ST Microelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products