Módulo transistor IGBT, SK45GD063, Hex., 45 A, 600 V, N-Canal, SEMITOP3, 36-Pines 6 Paquete de seis

Código de producto RS: 125-1109Marca: SemikronNúmero de parte de fabricante: SK45GD063
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Documentos Técnicos

Especificaciones

Corriente Máxima Continua del Colector

45 A

Tensión Máxima Colector-Emisor

600 V

Tensión Máxima Puerta-Emisor

20V

Número de transistores

6

Tipo de Encapsulado

SEMITOP3

Configuration

Hex

Tipo de montaje

Through Hole

Tipo de Canal

N

Conteo de Pines

36

Transistor Configuration

Six Pack

Dimensiones del Cuerpo

55 x 31 x 12mm

Temperatura Mínima de Funcionamiento

-40 ºC

Máxima Temperatura de Funcionamiento

+150 ºC

País de Origen

Italy

Datos del producto

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

Módulo transistor IGBT, SK45GD063, Hex., 45 A, 600 V, N-Canal, SEMITOP3, 36-Pines 6 Paquete de seis

P.O.A.

Módulo transistor IGBT, SK45GD063, Hex., 45 A, 600 V, N-Canal, SEMITOP3, 36-Pines 6 Paquete de seis
Volver a intentar más tarde

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificaciones

Corriente Máxima Continua del Colector

45 A

Tensión Máxima Colector-Emisor

600 V

Tensión Máxima Puerta-Emisor

20V

Número de transistores

6

Tipo de Encapsulado

SEMITOP3

Configuration

Hex

Tipo de montaje

Through Hole

Tipo de Canal

N

Conteo de Pines

36

Transistor Configuration

Six Pack

Dimensiones del Cuerpo

55 x 31 x 12mm

Temperatura Mínima de Funcionamiento

-40 ºC

Máxima Temperatura de Funcionamiento

+150 ºC

País de Origen

Italy

Datos del producto

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more