IGBT, RJP4010AGE-01#P5, N-Canal, 150 A (pulso), 400 V, TSOJ, 8-Pines Simple

Código de producto RS: 121-6899Marca: Renesas ElectronicsNúmero de parte de fabricante: RJP4010AGE-01#P5
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Documentos Técnicos

Especificaciones

Brand

Renesas Electronics

Corriente Máxima Continua del Colector

150 A (pulso)

Tensión Máxima Colector-Emisor

400 V

Tensión Máxima Puerta-Emisor

±6V

Disipación de Potencia Máxima

1.6 W

Tipo de Encapsulado

TSOJ

Tipo de montaje

Surface Mount

Tipo de Canal

N

Conteo de Pines

8

Transistor Configuration

Single

Dimensiones del Cuerpo

3.1 x 2.5 x 1mm

Temperatura Mínima de Operación

-40 ºC

Capacitancia de puerta

5100pF

Temperatura máxima de funcionamiento

+150 ºC

Datos del producto

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

IGBT, RJP4010AGE-01#P5, N-Canal, 150 A (pulso), 400 V, TSOJ, 8-Pines Simple

4

Disponible en múltiplos de 4
4P.O.A.
8P.O.A.
12P.O.A.
16P.O.A.
20P.O.A.
24P.O.A.
28P.O.A.
32P.O.A.
36P.O.A.
40P.O.A.
44P.O.A.
48P.O.A.
52P.O.A.
56P.O.A.
60P.O.A.

P.O.A.

IGBT, RJP4010AGE-01#P5, N-Canal, 150 A (pulso), 400 V, TSOJ, 8-Pines Simple
Volver a intentar más tarde

4

Disponible en múltiplos de 4
4P.O.A.
8P.O.A.
12P.O.A.
16P.O.A.
20P.O.A.
24P.O.A.
28P.O.A.
32P.O.A.
36P.O.A.
40P.O.A.
44P.O.A.
48P.O.A.
52P.O.A.
56P.O.A.
60P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificaciones

Brand

Renesas Electronics

Corriente Máxima Continua del Colector

150 A (pulso)

Tensión Máxima Colector-Emisor

400 V

Tensión Máxima Puerta-Emisor

±6V

Disipación de Potencia Máxima

1.6 W

Tipo de Encapsulado

TSOJ

Tipo de montaje

Surface Mount

Tipo de Canal

N

Conteo de Pines

8

Transistor Configuration

Single

Dimensiones del Cuerpo

3.1 x 2.5 x 1mm

Temperatura Mínima de Operación

-40 ºC

Capacitancia de puerta

5100pF

Temperatura máxima de funcionamiento

+150 ºC

Datos del producto

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more