IGBT, ISL9V2040D3ST, N-Canal, 10 A, 450 V, DPAK (TO-252), 3-Pines Simple

Código de producto RS: 862-9347PMarca: onsemiNúmero de parte de fabricante: ISL9V2040D3ST
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Documentos Técnicos

Especificaciones

Brand

onsemi

Corriente Máxima Continua del Colector

10 A

Tensión Máxima Colector-Emisor

450 V

Tensión Máxima Puerta-Emisor

±14V

Disipación de Potencia Máxima

130000 mW

Tipo de Encapsulado

DPAK (TO-252)

Tipo de montaje

Surface Mount

Tipo de Canal

N

Conteo de Pines

3

Transistor Configuration

Single

Dimensiones del Cuerpo

6.73 x 6.22 x 2.39mm

Temperatura de Funcionamiento Mínima

-40 ºC

Temperatura máxima de funcionamiento

+175 °C

Datos del producto

IGBT discretos, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

IGBT, ISL9V2040D3ST, N-Canal, 10 A, 450 V, DPAK (TO-252), 3-Pines Simple
Seleccionar tipo de embalaje

P.O.A.

IGBT, ISL9V2040D3ST, N-Canal, 10 A, 450 V, DPAK (TO-252), 3-Pines Simple
Volver a intentar más tarde
Seleccionar tipo de embalaje

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificaciones

Brand

onsemi

Corriente Máxima Continua del Colector

10 A

Tensión Máxima Colector-Emisor

450 V

Tensión Máxima Puerta-Emisor

±14V

Disipación de Potencia Máxima

130000 mW

Tipo de Encapsulado

DPAK (TO-252)

Tipo de montaje

Surface Mount

Tipo de Canal

N

Conteo de Pines

3

Transistor Configuration

Single

Dimensiones del Cuerpo

6.73 x 6.22 x 2.39mm

Temperatura de Funcionamiento Mínima

-40 ºC

Temperatura máxima de funcionamiento

+175 °C

Datos del producto

IGBT discretos, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more