Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
75 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones
15.87 x 4.82 x 20.82mm
Temperatura de Funcionamiento Mínima
-55 °C
Máxima Temperatura de Funcionamiento
+150 ºC
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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$ 8.912
Each (Sin IVA)
$ 10.605
Each (IVA Incluido)
1
$ 8.912
Each (Sin IVA)
$ 10.605
Each (IVA Incluido)
1
Comprar en grandes cantidades
Cantidad | Precio Unitario sin IVA |
---|---|
1 - 5 | $ 8.912 |
6 - 14 | $ 8.255 |
15+ | $ 7.933 |
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
75 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones
15.87 x 4.82 x 20.82mm
Temperatura de Funcionamiento Mínima
-55 °C
Máxima Temperatura de Funcionamiento
+150 ºC
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.