IGBT, HGT1S10N120BNST, N-Canal, 80 A, 1.200 V, D2PAK (TO-263), 3-Pines, 1MHZ Simple
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
80 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
298000 mW
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Transistor Configuration
Single
Dimensiones del Cuerpo
10.67 x 11.33 x 4.83mm
Temperatura Mínima de Operación
-55 °C
Máxima Temperatura de Funcionamiento
+150 ºC
Datos del producto
IGBT discretos, 1.000 V y superior, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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$ 3.382
Each (In a Pack of 2) (Sin IVA)
$ 4.024,58
Each (In a Pack of 2) (IVA Incluido)
2
$ 3.382
Each (In a Pack of 2) (Sin IVA)
$ 4.024,58
Each (In a Pack of 2) (IVA Incluido)
2
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Por Pack |
|---|---|---|
| 2 - 6 | $ 3.382 | $ 6.764 |
| 8 - 38 | $ 3.010 | $ 6.020 |
| 40 - 198 | $ 2.666 | $ 5.332 |
| 200 - 398 | $ 2.308 | $ 4.616 |
| 400+ | $ 2.016 | $ 4.032 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
80 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
298000 mW
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Transistor Configuration
Single
Dimensiones del Cuerpo
10.67 x 11.33 x 4.83mm
Temperatura Mínima de Operación
-55 °C
Máxima Temperatura de Funcionamiento
+150 ºC
Datos del producto
IGBT discretos, 1.000 V y superior, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products