IGBT, FGL40N120ANDTU, N-Canal, 64 A, 1.200 V, TO-264, 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
64 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±25V
Tipo de Encapsulado
TO-264
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
20 x 5 x 26mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura máxima de funcionamiento
+150 ºC
Datos del producto
IGBT discretos, 1.000 V y superior, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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$ 10.839
Each (In a Tube of 25) (Sin IVA)
$ 12.898,41
Each (In a Tube of 25) (IVA Incluido)
25
$ 10.839
Each (In a Tube of 25) (Sin IVA)
$ 12.898,41
Each (In a Tube of 25) (IVA Incluido)
25
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Por Tubo |
|---|---|---|
| 25 - 100 | $ 10.839 | $ 270.975 |
| 125 - 225 | $ 9.191 | $ 229.775 |
| 250+ | $ 8.109 | $ 202.725 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
64 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±25V
Tipo de Encapsulado
TO-264
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
20 x 5 x 26mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura máxima de funcionamiento
+150 ºC
Datos del producto
IGBT discretos, 1.000 V y superior, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products