IGBT, FGH40N60SMDF, N-Canal, 80 A, 600 V, TO-247AB, 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
80 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
349 W
Tipo de Encapsulado
TO-247AB
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
15.6 x 4.7 x 20.6mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura máxima de funcionamiento
+175 °C
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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$ 7.962
Each (Sin IVA)
$ 9.475
Each (IVA Incluido)
1
$ 7.962
Each (Sin IVA)
$ 9.475
Each (IVA Incluido)
1
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA |
|---|---|
| 1 - 9 | $ 7.962 |
| 10 - 49 | $ 6.750 |
| 50 - 99 | $ 6.385 |
| 100 - 249 | $ 5.873 |
| 250+ | $ 5.523 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
80 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
349 W
Tipo de Encapsulado
TO-247AB
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
15.6 x 4.7 x 20.6mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura máxima de funcionamiento
+175 °C
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products