onsemi FGH15T120SMD_F155 IGBT, 30 A 1200 V, 3-Pin TO-247, Surface Mount
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
30 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±25V
Disipación de Potencia Máxima
333 W
Tipo de Encapsulado
TO-247
Tipo de montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
15.87 x 4.82 x 20.82mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura de Funcionamiento Máxima
+175 °C
Datos del producto
IGBT discretos, 1.000 V y superior, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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$ 6.371
Each (In a Tube of 30) (Sin IVA)
$ 7.581,49
Each (In a Tube of 30) (IVA Incluido)
30
$ 6.371
Each (In a Tube of 30) (Sin IVA)
$ 7.581,49
Each (In a Tube of 30) (IVA Incluido)
30
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Por Tubo |
|---|---|---|
| 30 - 120 | $ 6.371 | $ 191.130 |
| 150+ | $ 5.530 | $ 165.900 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
30 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±25V
Disipación de Potencia Máxima
333 W
Tipo de Encapsulado
TO-247
Tipo de montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
15.87 x 4.82 x 20.82mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura de Funcionamiento Máxima
+175 °C
Datos del producto
IGBT discretos, 1.000 V y superior, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products