IGBT, FGAF40N60UFTU, N-Canal, 40 A, 600 V, TO-3PF, 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
40 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
100000 mW
Tipo de Encapsulado
TO-3PF
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
15.5 x 5.5 x 26.5mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura máxima de funcionamiento
+150 ºC
País de Origen
China
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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$ 3.737
Each (In a Tube of 30) (Sin IVA)
$ 4.447,03
Each (In a Tube of 30) (IVA Incluido)
30
$ 3.737
Each (In a Tube of 30) (Sin IVA)
$ 4.447,03
Each (In a Tube of 30) (IVA Incluido)
30
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Por Tubo |
|---|---|---|
| 30 - 30 | $ 3.737 | $ 112.110 |
| 60 - 120 | $ 3.438 | $ 103.140 |
| 150 - 270 | $ 3.232 | $ 96.960 |
| 300+ | $ 2.975 | $ 89.250 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
40 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
100000 mW
Tipo de Encapsulado
TO-3PF
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
15.5 x 5.5 x 26.5mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura máxima de funcionamiento
+150 ºC
País de Origen
China
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products