IGBT, FGA25N120ANTDTU, N-Canal, 50 A, 1.200 V, TO-3P, 3-Pines, 1MHZ Simple
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
50 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
312000 mW
Tipo de Encapsulado
TO-3P
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Transistor Configuration
Single
Dimensiones
15.8 x 5 x 18.9mm
Mínima Temperatura de Funcionamiento
-55 °C
Temperatura máxima de funcionamiento
+150 ºC
Datos del producto
IGBT discretos, 1.000 V y superior, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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$ 4.310
Each (In a Tube of 30) (Sin IVA)
$ 5.128,90
Each (In a Tube of 30) (IVA Incluido)
30
$ 4.310
Each (In a Tube of 30) (Sin IVA)
$ 5.128,90
Each (In a Tube of 30) (IVA Incluido)
30
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Por Tubo |
|---|---|---|
| 30 - 30 | $ 4.310 | $ 129.300 |
| 60 - 120 | $ 4.094 | $ 122.820 |
| 150 - 270 | $ 3.715 | $ 111.450 |
| 300 - 570 | $ 3.534 | $ 106.020 |
| 600+ | $ 3.172 | $ 95.160 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
50 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
312000 mW
Tipo de Encapsulado
TO-3P
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Transistor Configuration
Single
Dimensiones
15.8 x 5 x 18.9mm
Mínima Temperatura de Funcionamiento
-55 °C
Temperatura máxima de funcionamiento
+150 ºC
Datos del producto
IGBT discretos, 1.000 V y superior, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products