onsemi Transistor digital TSOT-23 Canal N, 6 pines Superficie

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

• Max rDS(on) = 109 mΩat VGS = 10 V, ID = 2.7 A
• Max rDS(on) = 176 mΩat VGS = 6 V, ID = 2.1 A
• High performance trench technology for extremely low rDS(on)
• High power and current handling capability in a widely used surface mount package
• Fast switching speed
• Applications
• This product is general usage and suitable for many different applications.