Optoacoplador onsemi CNY de 1 canales 1.65 V, Viso= 4.17 kVrms, Superficie, encapsulado Montaje superficial, 6 pines

The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.

• High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)
• Closely Matched Current Transfer Ratio (CTR)
• Minimizes Unit-to-Unit Variation
• Current Transfer Ratio In Select Groups
• Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M)
• Applications
• AC-DC Merchant Power Supply
• Consumer Appliances
• Industrial Motor