Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
75 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Configuration
3 Phase Bridge
Tipo de montaje
PCB Mount
Tipo de Canal
N
Conteo de Pines
23
Transistor Configuration
3 Phase
Dimensiones
107.5 x 45 x 17mm
Temperatura de Funcionamiento Mínima
-40 ºC
Temperatura máxima de funcionamiento
125 °C
Datos del producto
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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6
Documentos Técnicos
Especificaciones
Brand
IXYSCorriente Máxima Continua del Colector
75 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Configuration
3 Phase Bridge
Tipo de montaje
PCB Mount
Tipo de Canal
N
Conteo de Pines
23
Transistor Configuration
3 Phase
Dimensiones
107.5 x 45 x 17mm
Temperatura de Funcionamiento Mínima
-40 ºC
Temperatura máxima de funcionamiento
125 °C
Datos del producto
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.