Módulo IGBT, MUBW50-06A7, N-Canal, 75 A, 600 V, 23-Pines Trifásico

Código de producto RS: 146-1698Marca: IXYSNúmero de parte de fabricante: MUBW50-06A7
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Documentos Técnicos

Especificaciones

Brand

IXYS

Corriente Máxima Continua del Colector

75 A

Tensión Máxima Colector-Emisor

600 V

Tensión Máxima Puerta-Emisor

±20V

Configuration

3 Phase Bridge

Tipo de montaje

PCB Mount

Tipo de Canal

N

Conteo de Pines

23

Transistor Configuration

3 Phase

Dimensiones del Cuerpo

107.5 x 45 x 17mm

Temperatura Mínima de Operación

-40 ºC

Temperatura de Funcionamiento Máxima

125 °C

Datos del producto

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

Módulo IGBT, MUBW50-06A7, N-Canal, 75 A, 600 V, 23-Pines Trifásico

P.O.A.

Módulo IGBT, MUBW50-06A7, N-Canal, 75 A, 600 V, 23-Pines Trifásico
Volver a intentar más tarde

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificaciones

Brand

IXYS

Corriente Máxima Continua del Colector

75 A

Tensión Máxima Colector-Emisor

600 V

Tensión Máxima Puerta-Emisor

±20V

Configuration

3 Phase Bridge

Tipo de montaje

PCB Mount

Tipo de Canal

N

Conteo de Pines

23

Transistor Configuration

3 Phase

Dimensiones del Cuerpo

107.5 x 45 x 17mm

Temperatura Mínima de Operación

-40 ºC

Temperatura de Funcionamiento Máxima

125 °C

Datos del producto

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more