Módulo transistor IGBT, MIXA300PF1200TSF, Doble, 465 A, 1.200 V, N-Canal, SimBus F, 11-Pines Serie

Código de producto RS: 124-0711Marca: IXYSNúmero de parte de fabricante: MIXA300PF1200TSF
brand-logo
Ver todo de IGBT

Documentos Técnicos

Especificaciones

Brand

IXYS

Corriente Máxima Continua del Colector

465 A

Tensión Máxima Colector-Emisor

1200 V

Tensión Máxima Puerta-Emisor

±30V

Disipación de Potencia Máxima

1,5 kW

Tipo de Encapsulado

SimBus F

Configuration

Dual

Tipo de montaje

PCB Mount

Tipo de Canal

N

Conteo de Pines

11

Transistor Configuration

Series

Dimensiones del Cuerpo

152 x 62 x 17mm

Temperatura Mínima de Operación

-40 ºC

Temperatura de Funcionamiento Máxima

+150 ºC

Datos del producto

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Volver a intentar más tarde

Vuelva a verificar más tarde.

Volver a intentar más tarde

P.O.A.

Módulo transistor IGBT, MIXA300PF1200TSF, Doble, 465 A, 1.200 V, N-Canal, SimBus F, 11-Pines Serie

P.O.A.

Módulo transistor IGBT, MIXA300PF1200TSF, Doble, 465 A, 1.200 V, N-Canal, SimBus F, 11-Pines Serie
Volver a intentar más tarde

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificaciones

Brand

IXYS

Corriente Máxima Continua del Colector

465 A

Tensión Máxima Colector-Emisor

1200 V

Tensión Máxima Puerta-Emisor

±30V

Disipación de Potencia Máxima

1,5 kW

Tipo de Encapsulado

SimBus F

Configuration

Dual

Tipo de montaje

PCB Mount

Tipo de Canal

N

Conteo de Pines

11

Transistor Configuration

Series

Dimensiones del Cuerpo

152 x 62 x 17mm

Temperatura Mínima de Operación

-40 ºC

Temperatura de Funcionamiento Máxima

+150 ºC

Datos del producto

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more