Módulo IGBT, MII100-12A3, N-Canal, 135 A, 1200 V, Y4 M5, 7-Pines Serie

Código de producto RS: 193-874Marca: IXYSNúmero de parte de fabricante: MII100-12A3
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Documentos Técnicos

Especificaciones

Brand

IXYS

Corriente Máxima Continua del Colector

135 A

Tensión Máxima Colector-Emisor

1200 V

Tensión Máxima Puerta-Emisor

±20V

Tipo de Encapsulado

Y4 M5

Configuration

Series

Tipo de montaje

Panel Mount

Tipo de Canal

N

Conteo de Pines

7

Transistor Configuration

Series

Dimensiones del Cuerpo

94 x 34 x 30mm

Temperatura máxima de funcionamiento

+150 ºC

Temperatura Mínima de Operación

-40 ºC

Datos del producto

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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$ 86.389

Each (Sin IVA)

$ 102.803

Each (IVA Incluido)

Módulo IGBT, MII100-12A3, N-Canal, 135 A, 1200 V, Y4 M5, 7-Pines Serie

1

Disponible en múltiplos de 1
1$ 86.389
2$ 172.778
3$ 259.167
4$ 345.556
5$ 431.945
6$ 518.334
7$ 604.723
8$ 691.112
9$ 777.501
10$ 863.890
11$ 950.279
12$ 1.036.668
13$ 1.123.057
14$ 1.209.446
15$ 1.295.835

$ 86.389

Each (Sin IVA)

$ 102.803

Each (IVA Incluido)

Módulo IGBT, MII100-12A3, N-Canal, 135 A, 1200 V, Y4 M5, 7-Pines Serie
Volver a intentar más tarde

1

Disponible en múltiplos de 1
1$ 86.389
2$ 172.778
3$ 259.167
4$ 345.556
5$ 431.945
6$ 518.334
7$ 604.723
8$ 691.112
9$ 777.501
10$ 863.890
11$ 950.279
12$ 1.036.668
13$ 1.123.057
14$ 1.209.446
15$ 1.295.835

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificaciones

Brand

IXYS

Corriente Máxima Continua del Colector

135 A

Tensión Máxima Colector-Emisor

1200 V

Tensión Máxima Puerta-Emisor

±20V

Tipo de Encapsulado

Y4 M5

Configuration

Series

Tipo de montaje

Panel Mount

Tipo de Canal

N

Conteo de Pines

7

Transistor Configuration

Series

Dimensiones del Cuerpo

94 x 34 x 30mm

Temperatura máxima de funcionamiento

+150 ºC

Temperatura Mínima de Operación

-40 ºC

Datos del producto

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more