Documentos Técnicos
Especificaciones
Brand
IXYSTipo de Producto
Módulo IGBT
Configuración
Single
Encapsulado
Y4-M5
Tipo de canal
Type N
Número de pines
7
Temperatura de Funcionamiento Mínima
-40°C
Temperatura Máxima de Funcionamiento
150°C
Anchura
34 mm
Longitud
94mm
Altura
30mm
Datos del producto
Módulos IGBT, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Volver a intentar más tarde
$ 251.796
$ 41.966 Each (In a Box of 6) (Sin IVA)
$ 299.637
$ 49.939,54 Each (In a Box of 6) (IVA Inc.)
6
$ 251.796
$ 41.966 Each (In a Box of 6) (Sin IVA)
$ 299.637
$ 49.939,54 Each (In a Box of 6) (IVA Inc.)
Volver a intentar más tarde
6
Documentos Técnicos
Especificaciones
Brand
IXYSTipo de Producto
Módulo IGBT
Configuración
Single
Encapsulado
Y4-M5
Tipo de canal
Type N
Número de pines
7
Temperatura de Funcionamiento Mínima
-40°C
Temperatura Máxima de Funcionamiento
150°C
Anchura
34 mm
Longitud
94mm
Altura
30mm
Datos del producto
Módulos IGBT, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


