IGBT, IXGH30N120B3D1, 50 A, 1.200 V, TO-247, 3-Pines Simple

Código de producto RS: 192-641Marca: IXYSNúmero de parte de fabricante: IXGH30N120B3D1
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Documentos Técnicos

Especificaciones

Brand

IXYS

Corriente Máxima Continua del Colector

50 A

Tensión Máxima Colector-Emisor

1200 V

Tipo de Encapsulado

TO-247

Tipo de montaje

Through Hole

Conteo de Pines

3

Transistor Configuration

Single

Temperatura de Funcionamiento Mínima

-55 °C

Máxima Temperatura de Funcionamiento

+150 ºC

Datos del producto

Discretos IGBT, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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$ 13.354

Each (Sin IVA)

$ 15.891

Each (IVA Incluido)

IGBT, IXGH30N120B3D1, 50 A, 1.200 V, TO-247, 3-Pines Simple

1

Disponible en múltiplos de 1
1$ 13.354
2$ 26.708
3$ 40.062
4$ 53.416
5$ 66.770
6$ 80.124
7$ 93.478
8$ 106.832
9$ 120.186
10$ 116.300
11$ 127.930
12$ 139.560
13$ 151.190
14$ 162.820
15$ 174.450

$ 13.354

Each (Sin IVA)

$ 15.891

Each (IVA Incluido)

IGBT, IXGH30N120B3D1, 50 A, 1.200 V, TO-247, 3-Pines Simple
Volver a intentar más tarde

1

Disponible en múltiplos de 1
1$ 13.354
2$ 26.708
3$ 40.062
4$ 53.416
5$ 66.770
6$ 80.124
7$ 93.478
8$ 106.832
9$ 120.186
10$ 116.300
11$ 127.930
12$ 139.560
13$ 151.190
14$ 162.820
15$ 174.450

Comprar en grandes cantidades

CantidadPrecio Unitario sin IVA
1 - 9$ 13.354
10+$ 11.630

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificaciones

Brand

IXYS

Corriente Máxima Continua del Colector

50 A

Tensión Máxima Colector-Emisor

1200 V

Tipo de Encapsulado

TO-247

Tipo de montaje

Through Hole

Conteo de Pines

3

Transistor Configuration

Single

Temperatura de Funcionamiento Mínima

-55 °C

Máxima Temperatura de Funcionamiento

+150 ºC

Datos del producto

Discretos IGBT, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more