MOSFET Infineon SPW47N60C3FKSA1, VDSS 650 V, ID 47 A, TO-247 de 3 pines, config. Simple
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
47 A
Tensión Máxima Drenador-Fuente
650 V
Serie
CoolMOS C3
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
70 m.Ω
Modo de Canal
Mejora
Tensión de umbral de puerta máxima
3.9V
Tensión de umbral de puerta mínima
2.1V
Disipación de Potencia Máxima
415 W
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Número de Elementos por Chip
1
Temperatura de Funcionamiento Máxima
+150 ºC
Material del transistor
Si
Longitud
15.9mm
Carga Típica de Puerta @ Vgs
252 nC a 10 V
Ancho
5.3mm
Temperatura Mínima de Operación
-55 °C
Altura
20.95mm
País de Origen
Philippines
Datos del producto
MOSFET de potencia Infineon CoolMOS™C3
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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$ 21.935
Each (In a Tube of 30) (Sin IVA)
$ 26.102,65
Each (In a Tube of 30) (IVA Incluido)
30
$ 21.935
Each (In a Tube of 30) (Sin IVA)
$ 26.102,65
Each (In a Tube of 30) (IVA Incluido)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
47 A
Tensión Máxima Drenador-Fuente
650 V
Serie
CoolMOS C3
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
70 m.Ω
Modo de Canal
Mejora
Tensión de umbral de puerta máxima
3.9V
Tensión de umbral de puerta mínima
2.1V
Disipación de Potencia Máxima
415 W
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Número de Elementos por Chip
1
Temperatura de Funcionamiento Máxima
+150 ºC
Material del transistor
Si
Longitud
15.9mm
Carga Típica de Puerta @ Vgs
252 nC a 10 V
Ancho
5.3mm
Temperatura Mínima de Operación
-55 °C
Altura
20.95mm
País de Origen
Philippines
Datos del producto
MOSFET de potencia Infineon CoolMOS™C3
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products