IGBT, IRG4PC40FPBF, N-Canal, 49 A, 600 V, TO-247AC, 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
InfineonCorriente Máxima Continua del Colector
49 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-247AC
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
15.9 x 5.3 x 20.3mm
Temperatura de Funcionamiento Máxima
+150 ºC
Temperatura Mínima de Operación
-55 °C
País de Origen
Mexico
Datos del producto
IGBT sencillo de más de 21 A, Infineon
Los IGBT optimizados se han diseñado para aplicaciones de frecuencia media con respuesta rápida y proporcionan al usuario la mayor eficiencia posible. Se pueden usar con los diodos FRED que se han optimizado para proporcionar el mejor rendimiento con los IGBT
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
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$ 6.896
Each (Sin IVA)
$ 8.206
Each (IVA Incluido)
1
$ 6.896
Each (Sin IVA)
$ 8.206
Each (IVA Incluido)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonCorriente Máxima Continua del Colector
49 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-247AC
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
15.9 x 5.3 x 20.3mm
Temperatura de Funcionamiento Máxima
+150 ºC
Temperatura Mínima de Operación
-55 °C
País de Origen
Mexico
Datos del producto
IGBT sencillo de más de 21 A, Infineon
Los IGBT optimizados se han diseñado para aplicaciones de frecuencia media con respuesta rápida y proporcionan al usuario la mayor eficiencia posible. Se pueden usar con los diodos FRED que se han optimizado para proporcionar el mejor rendimiento con los IGBT
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products