IGBT, IRG4BC20KDSTRLP, N-Canal, 16 A, 600 V, D2PAK (TO-263), 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
InfineonCorriente Máxima Continua del Colector
16 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
60000 mW
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
10.67 x 11.3 x 4.83mm
Temperatura Mínima de Operación
-55 °C
Temperatura de Funcionamiento Máxima
+150 ºC
Energía nominal
0.96mJ
Datos del producto
IGBT sencillo hasta 20 A, Infineon
Los IGBT optimizados se han diseñado para aplicaciones de frecuencia media con respuesta rápida que proporcionan al usuario la mayor eficiencia posible. Estos dispositivos usan diodos FRED que se han optimizado para proporcionar el mejor rendimiento con los IGBT
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
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Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonCorriente Máxima Continua del Colector
16 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
60000 mW
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
10.67 x 11.3 x 4.83mm
Temperatura Mínima de Operación
-55 °C
Temperatura de Funcionamiento Máxima
+150 ºC
Energía nominal
0.96mJ
Datos del producto
IGBT sencillo hasta 20 A, Infineon
Los IGBT optimizados se han diseñado para aplicaciones de frecuencia media con respuesta rápida que proporcionan al usuario la mayor eficiencia posible. Estos dispositivos usan diodos FRED que se han optimizado para proporcionar el mejor rendimiento con los IGBT
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products