MOSFET Infineon IPW65R041CFDFKSA1, VDSS 700 V, ID 68 A, TO-247 de 3 pines, , config. Simple
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
68,5 A
Tensión Máxima Drenador-Fuente
700 V
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
41 mΩ
Modo de Canal
Mejora
Disipación de Potencia Máxima
500000 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±30 V
Número de Elementos por Chip
1
Máxima Temperatura de Funcionamiento
+150 ºC
Material del transistor
Si
Longitud
16.13mm
Carga Típica de Puerta @ Vgs
300 nC a 10 V
Profundidad
5.21mm
Serie
CoolMOS CFD
Temperatura Mínima de Operación
-55 °C
Tensión de diodo directa
1V
Altura
21.1mm
País de Origen
China
Datos del producto
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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$ 19.729
Each (In a Tube of 30) (Sin IVA)
$ 23.477,51
Each (In a Tube of 30) (IVA Incluido)
30
$ 19.729
Each (In a Tube of 30) (Sin IVA)
$ 23.477,51
Each (In a Tube of 30) (IVA Incluido)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
68,5 A
Tensión Máxima Drenador-Fuente
700 V
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
41 mΩ
Modo de Canal
Mejora
Disipación de Potencia Máxima
500000 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±30 V
Número de Elementos por Chip
1
Máxima Temperatura de Funcionamiento
+150 ºC
Material del transistor
Si
Longitud
16.13mm
Carga Típica de Puerta @ Vgs
300 nC a 10 V
Profundidad
5.21mm
Serie
CoolMOS CFD
Temperatura Mínima de Operación
-55 °C
Tensión de diodo directa
1V
Altura
21.1mm
País de Origen
China
Datos del producto
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products