MOSFET Infineon IPW60R099CPFKSA1, VDSS 650 V, ID 31 A, TO-247 de 3 pines, , config. Simple
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
31,2 A
Tensión Máxima Drenador-Fuente
650 V
Serie
CoolMOS CP
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
99 m.Ω
Modo de Canal
Mejora
Tensión de umbral de puerta máxima
3.5V
Tensión de umbral de puerta mínima
2.5V
Disipación de Potencia Máxima
255000 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Ancho
5.21mm
Número de Elementos por Chip
1
Temperatura de Funcionamiento Máxima
+150 ºC
Material del transistor
Si
Longitud
16.13mm
Carga Típica de Puerta @ Vgs
14 nC a 10 V
Altura
21.1mm
Temperatura Mínima de Operación
-55 °C
País de Origen
Germany
Datos del producto
MOSFET de potencia Infineon CoolMOS™CP
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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$ 12.585
Each (In a Tube of 30) (Sin IVA)
$ 14.976,15
Each (In a Tube of 30) (IVA Incluido)
30
$ 12.585
Each (In a Tube of 30) (Sin IVA)
$ 14.976,15
Each (In a Tube of 30) (IVA Incluido)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
31,2 A
Tensión Máxima Drenador-Fuente
650 V
Serie
CoolMOS CP
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
99 m.Ω
Modo de Canal
Mejora
Tensión de umbral de puerta máxima
3.5V
Tensión de umbral de puerta mínima
2.5V
Disipación de Potencia Máxima
255000 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Ancho
5.21mm
Número de Elementos por Chip
1
Temperatura de Funcionamiento Máxima
+150 ºC
Material del transistor
Si
Longitud
16.13mm
Carga Típica de Puerta @ Vgs
14 nC a 10 V
Altura
21.1mm
Temperatura Mínima de Operación
-55 °C
País de Origen
Germany
Datos del producto
MOSFET de potencia Infineon CoolMOS™CP
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products