MOSFET Infineon BSS138NH6327XTSA2, VDSS 60 V, ID 230 mA, SOT-23 de 3 pines, , config. Simple
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
230 mA
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
SOT-23-5
Serie
SIPMOS
Tipo de montaje
Surface Mount
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
6 Ω
Modo de Canal
Mejora
Tensión de umbral de puerta máxima
1.4V
Tensión de umbral de puerta mínima
0.6V
Disipación de Potencia Máxima
360 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Temperatura de Funcionamiento Máxima
+150 ºC
Largo
2.9mm
Carga Típica de Puerta @ Vgs
1 nC a 10 V
Material del transistor
Si
Profundidad
1.3mm
Número de Elementos por Chip
1
Altura
1mm
Temperatura de Funcionamiento Mínima
-55 °C
Datos del producto
MOSFET de canal N SIPMOS® de Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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$ 85
Each (On a Reel of 3000) (Sin IVA)
$ 101,15
Each (On a Reel of 3000) (IVA Incluido)
3000
$ 85
Each (On a Reel of 3000) (Sin IVA)
$ 101,15
Each (On a Reel of 3000) (IVA Incluido)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
230 mA
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
SOT-23-5
Serie
SIPMOS
Tipo de montaje
Surface Mount
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
6 Ω
Modo de Canal
Mejora
Tensión de umbral de puerta máxima
1.4V
Tensión de umbral de puerta mínima
0.6V
Disipación de Potencia Máxima
360 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Temperatura de Funcionamiento Máxima
+150 ºC
Largo
2.9mm
Carga Típica de Puerta @ Vgs
1 nC a 10 V
Material del transistor
Si
Profundidad
1.3mm
Número de Elementos por Chip
1
Altura
1mm
Temperatura de Funcionamiento Mínima
-55 °C
Datos del producto
MOSFET de canal N SIPMOS® de Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products