MOSFET Infineon BSC016N06NSATMA1, VDSS 60 V, ID 100 A, TDSON de 8 pines, , config. Simple
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
100 A
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
TDSON
Tipo de montaje
Surface Mount
Conteo de Pines
8
Resistencia Máxima Drenador-Fuente
2.4 mΩ
Modo de Canal
Mejora
Disipación de Potencia Máxima
139000 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Temperatura máxima de funcionamiento
+150 ºC
Longitud:
6mm
Carga Típica de Puerta @ Vgs
71 nC a 10 V
Ancho
5mm
Material del transistor
Si
Número de Elementos por Chip
1
Tensión de diodo directa
1.2V
Altura
1.1mm
Serie
OptiMOS 5
Mínima Temperatura de Funcionamiento
-55 °C
Datos del producto
MOSFET de potencia OptiMOS™5 de Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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$ 3.565
Each (In a Pack of 5) (Sin IVA)
$ 4.242,35
Each (In a Pack of 5) (IVA Incluido)
5
$ 3.565
Each (In a Pack of 5) (Sin IVA)
$ 4.242,35
Each (In a Pack of 5) (IVA Incluido)
5
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Por Pack |
|---|---|---|
| 5 - 20 | $ 3.565 | $ 17.825 |
| 25 - 120 | $ 2.826 | $ 14.130 |
| 125 - 245 | $ 2.265 | $ 11.325 |
| 250 - 620 | $ 2.183 | $ 10.915 |
| 625+ | $ 2.130 | $ 10.650 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
100 A
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
TDSON
Tipo de montaje
Surface Mount
Conteo de Pines
8
Resistencia Máxima Drenador-Fuente
2.4 mΩ
Modo de Canal
Mejora
Disipación de Potencia Máxima
139000 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Temperatura máxima de funcionamiento
+150 ºC
Longitud:
6mm
Carga Típica de Puerta @ Vgs
71 nC a 10 V
Ancho
5mm
Material del transistor
Si
Número de Elementos por Chip
1
Tensión de diodo directa
1.2V
Altura
1.1mm
Serie
OptiMOS 5
Mínima Temperatura de Funcionamiento
-55 °C
Datos del producto
MOSFET de potencia OptiMOS™5 de Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products