IGBT, FGW75N60HD, N-Canal, 75 A, 600 V, TO-247, 3-Pines Simple

Código de producto RS: 168-4686Marca: Fuji ElectricNúmero de parte de fabricante: FGW75N60HD
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Documentos Técnicos

Especificaciones

Corriente Máxima Continua del Colector

75 A

Tensión Máxima Colector-Emisor

600 V

Tensión Máxima Puerta-Emisor

±20V

Disipación de Potencia Máxima

500000 mW

Tipo de Encapsulado

TO-247

Tipo de montaje

Through Hole

Tipo de Canal

N

Conteo de Pines

3

Transistor Configuration

Single

Dimensiones del Cuerpo

15.9 x 5.03 x 20.95mm

Máxima Temperatura de Funcionamiento

+175 °C

Temperatura Mínima de Funcionamiento

-40 ºC

País de Origen

Japan

Datos del producto

Discretos IGBT, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

IGBT, FGW75N60HD, N-Canal, 75 A, 600 V, TO-247, 3-Pines Simple

P.O.A.

IGBT, FGW75N60HD, N-Canal, 75 A, 600 V, TO-247, 3-Pines Simple
Volver a intentar más tarde

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificaciones

Corriente Máxima Continua del Colector

75 A

Tensión Máxima Colector-Emisor

600 V

Tensión Máxima Puerta-Emisor

±20V

Disipación de Potencia Máxima

500000 mW

Tipo de Encapsulado

TO-247

Tipo de montaje

Through Hole

Tipo de Canal

N

Conteo de Pines

3

Transistor Configuration

Single

Dimensiones del Cuerpo

15.9 x 5.03 x 20.95mm

Máxima Temperatura de Funcionamiento

+175 °C

Temperatura Mínima de Funcionamiento

-40 ºC

País de Origen

Japan

Datos del producto

Discretos IGBT, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more