IGBT, FGW15N120VD, N-Canal, 15 A, 1.200 V, TO-247, 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
Fuji ElectricCorriente Máxima Continua del Colector
15 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
155000 mW
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
15.9 x 5.03 x 20.95mm
Temperatura Mínima de Operación
-40 ºC
Temperatura máxima de funcionamiento
+175 °C
País de Origen
Japan
Datos del producto
Discretos IGBT, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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P.O.A.
30
P.O.A.
30
Ideate. Create. Collaborate
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- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
Fuji ElectricCorriente Máxima Continua del Colector
15 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
155000 mW
Tipo de Encapsulado
TO-247
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
15.9 x 5.03 x 20.95mm
Temperatura Mínima de Operación
-40 ºC
Temperatura máxima de funcionamiento
+175 °C
País de Origen
Japan
Datos del producto
Discretos IGBT, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products