Módulo IGBT, 7MBR25UA-120-50, N-Canal, 25 A, 1.200 V, M711, 24-Pines Trifásico

Código de producto RS: 146-1716Marca: Fuji ElectricNúmero de parte de fabricante: 7MBR25UA-120-50
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Documentos Técnicos

Especificaciones

Brand

Fuji Electric

Corriente Máxima Continua del Colector

25 A

Tensión Máxima Colector-Emisor

1200 V

Tensión Máxima Puerta-Emisor

±20V

Disipación de Potencia Máxima

115000 mW

Tipo de Encapsulado

M711

Configuration

3 Phase Bridge

Tipo de montaje

PCB Mount

Tipo de Canal

N

Conteo de Pines

24

Transistor Configuration

3 Phase

Dimensiones del Cuerpo

107.5 x 45 x 17mm

Máxima Temperatura de Funcionamiento

+150 ºC

País de Origen

Japan

Datos del producto

Discretos IGBT, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

Módulo IGBT, 7MBR25UA-120-50, N-Canal, 25 A, 1.200 V, M711, 24-Pines Trifásico

10

Disponible en múltiplos de 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

Módulo IGBT, 7MBR25UA-120-50, N-Canal, 25 A, 1.200 V, M711, 24-Pines Trifásico
Volver a intentar más tarde

10

Disponible en múltiplos de 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificaciones

Brand

Fuji Electric

Corriente Máxima Continua del Colector

25 A

Tensión Máxima Colector-Emisor

1200 V

Tensión Máxima Puerta-Emisor

±20V

Disipación de Potencia Máxima

115000 mW

Tipo de Encapsulado

M711

Configuration

3 Phase Bridge

Tipo de montaje

PCB Mount

Tipo de Canal

N

Conteo de Pines

24

Transistor Configuration

3 Phase

Dimensiones del Cuerpo

107.5 x 45 x 17mm

Máxima Temperatura de Funcionamiento

+150 ºC

País de Origen

Japan

Datos del producto

Discretos IGBT, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more